High Thermal Conductivity Silicon Nitride Si3N4 Ceramic Substrate

High Thermal Conductivity 80-90 W/m·K Silicon Nitride Si3N4 Ceramic Substrate

Bending Strength: ＞800 MPa
Thermal Conductivity: 80-90 W/m·K
Surface Roughness: Ra 0.2-0.6 μm
Breakdown Strength: >17 KV/mm

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PRODUCT DETAIL

Product Overview

The thermal conductivity of our Silicon Nitride (Si3N4) Ceramic Substrate is between 80 and 90 W/m.K.

Silicon Nitride ceramics have many excellent properties, such as high hardness, high strength, low coefficient of thermal expansion, low creep at high temperatures, good oxidation resistance, good thermal corrosion performance, and low friction coefficient, making them the best overall ceramic materials. They exhibit excellent mechanical properties under high frequency vibration or high temperature conditions. Therefore, it is widely used in aerospace, high-speed rail, new energy vehicles, etc. It is an important core heat dissipation material for insulated gate bipolar transistors (IGBT) and silicon carbide power modules (SiC MOSFET).

IGBT SiC MOSFET

Technical Data Sheet

Item	Unit	Value
Color	-	Gray
Warpage	‰	<3
Surface Roughness (Ra)	μm	0.20-0.6
Density	g/cm³	≥3.2
Bending Strength	MPa	>800
Hardness	HV	1500
Fracture Toughness	MPa·m^1/2	6-7
Thermal Conductivity	W/m·K	80-90
Thermal Expansion Coefficient	10^-6/K	2.6
Dielectric Constant (@1MHz)		8
Volume Resistivity (@25°C)	Ω/cm	>10¹⁴
Breakdown Strength	KV/mm	≥17

DISCLAIMER: The given data are not binding but are typical values based on sample testing. It should be taken into consideration that a spread of results can arise due to variations in material, shape, size and production.

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